1N5614 - 1n5622 glass passivated junction silicon rectifiers prv : 200 - 1000 volts io : 1.0 am p ere features : * glass passivated chip * high forward surge current capability * high reliability * low reverse current * low forward voltage drop * pb / rohs free mechanical data : * case : do-41 molded plastic * epoxy : ul94v-o rate flame retardant * lead : axial lead solderable per mil-std-202, method 208 guaranteed * polarity : color band denotes cathode end * mounting position : any * weight : 0.34 gram maximum ratings and electrical characteristics rating at 25 c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20%. symbol 1N5614 1n5616 1n5618 1n5620 1n5622 unit maximum working peak reverse voltage v rwm 200 400 600 800 1000 v minimum breakdown voltage @ 50 a v br(min) 220 440 660 880 1100 v maximum average forward current at ta = 55 c 1.0 at ta = 100 c 0.75 peak forward surge current (ta = 100 c,f = 60 hz, i f(av) = 750 ma for ten 8.3 ms surges @ 1 minute intervals) minimum forward voltage at i f = 3.0 a v f(min) 0.8 v maximum forward voltage at i f = 3.0a v f(max) 1.3 v maximum reverse current at v rwm , ta = 25 c i r 0.5 at v rwm , ta = 100 c i r(h) 25 maximum reverse recovery time ( note 1 ) trr 2.0 s thermal resistance , junction to lead (note 2) r ? jl 38 c/w operating junction and storage temperature range t j , t stg -65 to +175 c notes : (1) reverse recovery test conditions : i f = 0.5 a, i rm = 1.0 a, i r(rec) = 0.25 a. (2) at 3/8"(10 mm) lead length form body. page 1 of 1 rev. 02 : july 24, 2006 a a rating i fsm 30 i f(av) a do - 41 dimensions in inches and ( millimeters ) 1.00 (25.4) min. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.161 (4.1) 1.00 (25.4) min. 0.034 (0.86) 0.028 (0.71) certificate th97/10561qm certificate tw00/17276em
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